Semiconductor laser having improved index guiding

US9876331B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Alfred Lell · Maxhütte-Haidhof, DE
• Jens Mueller · Stuttgart, DE

Key dates

• Filing date: Mar 11, 2014
• Grant date: Jan 23, 2018
• Expiry date: Mar 11, 2034

Classification

• Technology area (CPC —): General

Abstract

A semiconductor laser includes a main body, a strip having a narrower width provided on the main body, and an active zone that generates light radiation, wherein surfaces of the main body laterally with respect to the strip and side surfaces of the strip are covered with an electrically insulating protective layer, an electrically conductive layer as a contact is provided on a top side of the strip, a cavity is provided between a side surface of the strip and the protective layer at least in a delimited section.