Pattern forming method
US9880464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Aug 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3086
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, an imprint pattern forming method includes providing a substrate with a pattern formation region and a peripheral region, the peripheral region having a surface lower than a surface of the pattern formation region, located at a periphery of the pattern formation region. The method includes forming an auxiliary pattern with a predetermined height on at least a portion of the peripheral region, providing a resist layer on at least the pattern formation region, and imprinting the resist layer using a template by locating the template in a region which includes a portion of the pattern formation region and a portion of the peripheral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.