Semiconductor device and method of fabricating the same
US9881809B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2015 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Apr 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device is provided. A dielectric layer is formed on a barrier layer. A first opening is formed in the dielectric layer and exposes a portion of the barrier layer. A protection layer is formed on the barrier layer at the bottom of the first opening. The protection layer is thicker at the central portion while thinner at the edge portion thereof. A portion of the exposed barrier layer is removed by using the protection layer as a mask to form a second opening. The second opening has at least one sub-opening disposed in the barrier layer adjacent to the sidewall of the second opening. A semiconductor device formed with the method is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.