Semiconductor device and method for producing semiconductor device
US9881851B2 · kind B2 · utility
2Cited by
7References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 4, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Mar 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06541
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a device layer located at an upper surface of the semiconductor substrate, an insulating layer located on the device layer, and a through electrode. The through electrode includes a body located in a through hole provided in the insulating layer and a head located on the body and the insulating layer and is electrically connected to an upper-layer wiring in the device layer. A perimeter of the head on a lower surface side thereof is smaller than a perimeter of the head on an upper surface side thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.