Top side cooling for GaN power device

US9881862B1 · kind B1 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ralf Otremba · Kaufbeuren, DE
• Klaus Schiess · Allensbach, DE

Key dates

• Filing date: Sep 20, 2016
• Grant date: Jan 30, 2018
• Expiry date: Sep 20, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/47
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A packaged semiconductor includes an electrically insulating encapsulant having opposite facing first and second planar sides. A thermally conductive substrate is partially embedded in the encapsulant such that an outer side of the substrate is exposed at the first side of the encapsulant and an inner side of the substrate is contained within the encapsulant. A GaN based power semiconductor device is completely embedded in the encapsulant and includes: a main side having electrically conductive device terminals, and a rear side that faces away from the main side and is mounted on the inner side the substrate. A plurality of electrically conductive leads is partially embedded in the encapsulant and electrically connected to the device terminals. Vertical portions of the leads extend away from the substrate towards the second side of the encapsulant.