Horizontal avalanche photodiode
US9881963B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Oct 4, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/809
Abstract
An avalanche photodiode sensor includes a plurality of avalanche photodiodes disposed in a semiconductor material where individual avalanche photodiodes in the plurality of avalanche photodiodes have an internal electric field parallel with a first surface of the semiconductor material. The individual avalanche photodiodes in the plurality of avalanche photodiodes include a p-doped semiconductor region which extends into the semiconductor material, and an n-doped semiconductor region which extends into the semiconductor material. The internal electric field extends between the p-doped semiconductor region and the n-doped semiconductor region. Processing methods as examples are also proposed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.