Patent · US Active

Semiconductor material including different crystalline orientation zones and related production process

US9882087B2 · kind B2 · utility

0Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 18, 2014
Grant dateJan 30, 2018
Priority date—
Expiry dateAug 16, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/821
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The invention relates to a manufacturing process of semiconductor material of element III nitride from a starting substrate, the process comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.