III nitride semiconductor light-emitting device
US9882088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2016 |
| Grant date | Jan 30, 2018 |
| Priority date | — |
| Expiry date | Apr 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
Abstract
A long-life III nitride semiconductor light emitting device and a method of producing the same. A III nitride semiconductor light-emitting device includes an n-type semiconductor layer; a light emitting layer containing at least Al; and a p-type semiconductor layer obtained by sequentially stacking an electron blocking layer, a p-type cladding layer, and a p-type contact layer, in this order. The electron blocking layer is made of AlxGa1-xN (0.55≦x≦1.0), the p-type contact layer is made of AlyGa1-yN (0≦y≦0.1), the p-type cladding layer is made of AlzGa1-zN having an Al content z which gradually decreases over the whole thickness of the p-type cladding layer from the electron blocking layer side toward the p-type contact layer side, and the reduction rate of the Al content z of the p-type cladding layer in the thickness direction is 0.01/nm or more and 0.025/nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.