Patent · US Active

Nonvolatile memory device

US9887006B1 · kind B1 · utility

2Cited by

4References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Strenz · Radebeul, DE
Robert Allinger · Unterhaching, DE

Key dates

Filing date	Oct 24, 2016
Grant date	Feb 6, 2018
Priority date	—
Expiry date	Oct 24, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10B63/84
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A nonvolatile memory device having a first resistive element coupled between a common node and a bit line; a second resistive element coupled between the common node and a word line, wherein the first and second resistive elements are coupled between different metal layers; and a pass transistor having a gate coupled to the common node, a first node coupled to a reference voltage, and a second node coupled to an output, wherein the word line is orthogonal to the bit line.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.