Systems and methods for integrated resputtering in a physical vapor deposition chamber
US9887072B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 23, 2014 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Jan 23, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure is directed to a material layer deposition system. The material layer deposition system includes a wafer pedestal configured to support at least one wafer within a confinement shield structure and a target carrier structure positioned above the wafer pedestal at an opposite side of the confinement shield structure. The target carrier structure is configured to support a sputtering target. The material layer deposition system further includes a collimator disposed within the confinement shield structure between the wafer pedestal and the target carrier structure, an electrical power source coupled to the collimator to supply electrical power, and a control system configured to control the electrical power source coupled to the collimator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.