Structure having isolated deep substrate vias with decreased pitch and increased aspect ratio and related method
US9887123B2 · kind B2 · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2015 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Oct 19, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure having isolated deep substrate vias with decreased pitch and increased aspect ratio is disclosed. The structure includes a device layer over a buried oxide layer, a deep trench extending through the device layer, a dielectric filler in the deep trench, via holes in the dielectric filler, and conductive fillers in the via holes being the isolated deep substrate vias. The dielectric filler may include silicon oxide. The conductive fillers may include tungsten or copper. An adjacent pair of the isolated deep substrate vias within the deep trench has a pitch equal to or less than 1.0 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.