Patent · US Active

Coaxial connector feed-through for multi-level interconnected semiconductor wafers

US9887195B1 · kind B1 · utility

3Cited by
4References
5Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 19, 2016
Grant dateFeb 6, 2018
Priority date—
Expiry dateOct 19, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2225/06565
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor, silicon-on-oxide (SOI) structure having a silicon layer disposed on a bottom oxide (BOX) insulating layer. A deep trench isolation (DTI) material passes vertically through the silicon layer to the bottom oxide insulating layer. The deep trench isolation material has a lower permittivity than the permittivity of the silicon. A coaxial transmission line having an inner electrical conductor and an outer electrically conductive shield structure disposed around the inner electrical conductor passing vertically through the deep trench isolation material to electrically connect electrical conductors disposed over the bottom oxide insulating layer to electrical conductors disposed under the contacts bottom oxide insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.