Separation type unit pixel of image sensor having three-dimensional structure
US9887230B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2013 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Jun 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional (3D) structure, which is capable of maximizing transmission efficient of a charge generated through a photodiode to a floating diffusion area. The separation type unit pixel may include a first wafer on which a photodiode and a transmission transistor are formed and a second wafer on which a reset transistor and a source follower transistor are formed. In particular, the photodiode has a positive region to which an N_ground voltage is applied, the N_ground voltage having a lower voltage level than a ground voltage used in the second wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.