Semiconductor device and method for fabricating the same
US9887238B1 · kind B1 · utility
1Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Jan 23, 2017 |
| Grant date | Feb 6, 2018 |
| Priority date | — |
| Expiry date | Jan 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A semiconductor device and a method for fabricating the semiconductor device have been provided. The method for fabricating a semiconductor device includes the steps of: forming a channel layer on a substrate; forming a gate dielectric layer on the channel layer; forming a source layer and a drain layer adjacent two sides of the gate dielectric layer; forming a bottom gate on the gate dielectric layer; forming a phase change layer on the bottom gate; and forming a top gate on the phase change layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.