Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US9890458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2015 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Feb 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A technique includes forming a film containing a first element, a second element, and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first solid layer containing the first element and carbon, and having a thickness of more than one atomic layer and equal to or less than several atomic layers, by supplying a precursor gas having a chemical bond of the first element and carbon to the substrate and confining the precursor gas within the process chamber, under a condition in which the precursor gas is autolyzed and at least a part of the chemical bond of the first element and carbon is maintained without being broken; and forming a second solid layer by supplying a reaction gas containing the second element to the substrate to modify the first solid layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.