Low stress bonding of silicon or germanium parts
US9892920B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2017 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Jan 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/83379
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a first part, a second part and a bonding material between the first part and the second part. The first part and the second part are made of a first material selected from a group consisting of silicon and germanium. The bonding material includes a second material that is different than the first material. The method includes arranging the first part, the bonding material, and the second part in a furnace; and creating a bonded part by heating the first part, the second part and the bonding material to a predetermined temperature for a predetermined period followed by a predetermined solidification period. The predetermined temperature is greater than 1.5 times a eutectic temperature of an alloy including the first material and the second material and less than a melting temperature of the first material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.