Semiconductor device structure and method for forming the same
US9892957B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2015 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Apr 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure includes a second dielectric layer over the first dielectric layer. The first dielectric layer and the second dielectric layer are made of different materials. The semiconductor device structure includes a conductive via structure passing through the first dielectric layer and penetrating into the second dielectric layer. The conductive via structure has a first portion and a second portion. The first portion and the second portion are in the first dielectric layer and the second dielectric layer respectively. The first portion has a first end portion facing the substrate. A first width of the first end portion is greater than a second width of the second portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.