Gap-fill polymer for filling fine pattern gaps and method for fabricating semiconductor device using the same
US9892964B1 · kind B1 · utility
1Cited by
2References
20Claims
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Key dates
| Filing date | Mar 27, 2017 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Mar 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.