Image sensor including photoelectric conversion devices
US9893123B2 · kind B2 · utility
3Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
An image sensor includes a substrate comprising a first face and a second surface which faces the first surface and on which light is incident, a semiconductor photoelectric conversion device on the substrate, a gate electrode located between the first surface of the substrate and the semiconductor photoelectric conversion device and extending in a first direction perpendicular to the first surface, and an organic photoelectric conversion device stacked on the second surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.