Structure and method for semiconductor device
US9893150B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2016 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Jan 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
Abstract
A semiconductor device and a method of forming the same are disclosed. The semiconductor device includes a substrate, and a source region and a drain region formed in the substrate. The semiconductor device further includes an impurity diffusion stop layer formed in a recess of the substrate between the source region and the drain region, wherein the impurity diffusion stop layer covers bottom and sidewalls of the recess. The semiconductor device further includes a channel layer formed over the impurity diffusion stop layer and in the recess, and a gate stack formed over the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.