Non-polar (Al,B,In,Ga)N quantum wells
US9893236B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Oct 23, 2015 |
| Grant date | Feb 13, 2018 |
| Priority date | — |
| Expiry date | Oct 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.