Patent · US Active

Method for producing III-N single crystals, and III-N single crystal

US9896779B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Marit Gründer · Berlin, DE
Frank Brunner · Berlin, DE
Eberhard Richter · Naila, DE
Frank Habel · Freiberg, DE
Markus Weyers · Wildau, DE

Key dates

Filing date	Mar 21, 2013
Grant date	Feb 20, 2018
Priority date	—
Expiry date	Mar 21, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24851
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.