Electronic device
US9898426B2 · kind B2 · utility
3Cited by
3References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 24, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Aug 24, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F12/0802
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device may include a semiconductor memory, and the semiconductor memory may include a free layer having a variable magnetization direction; a pinned layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the pinned layer and the free layer, wherein the free layer may include a first magnetic layer; a second magnetic layer formed over the first magnetic layer; and a Zirconium (Zr)-containing material layer interposed between the first magnetic layer and the second magnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.