Patent · US Active

Semiconductor layout structure and designing method thereof

US9898569B2 · kind B2 · utility

3Cited by
4References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 14, 2015
Grant dateFeb 20, 2018
Priority date
Expiry dateSep 14, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/83
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method for designing a semiconductor layout structure includes following steps. A first active feature group including at least a first active feature is received, and the first active feature includes a first channel length. A pair of first dummy features is introduced to form a first cell pattern. The first dummy features include a first dummy width. A first spacing width is defined between the first active feature group and one of the first dummy features and a third spacing width is defined between the first active feature group and the other first dummy feature. The first cell pattern includes a first cell width and a first poly pitch, and the first cell width is a multiple of the first pitch. The receiving of the first active feature group and the introducing of the first dummy features are performed in by at least a computer-aided design tool.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.