Patent · US Active

Raised e-fuse

US9899319B2 · kind B2 · utility

0Cited by

0References

18Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Andreas Kurz · Oberursel, DE
Andrei Sidelnicov · Dresden, DE

Key dates

Filing date	Feb 9, 2017
Grant date	Feb 20, 2018
Priority date	—
Expiry date	Feb 9, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device with a semiconductor-on-insulator (SOI) structure is provided including an insulating layer and a semiconductor layer formed on the insulating layer and a fuse. The fuse includes a first at least partially silicided raised semiconductor region with a first silicided portion and, adjacent to the first at least partially silicided raised semiconductor region, a second at least partially silicided raised semiconductor region with a second silicided portion. The second silicided portion is formed in direct physical contact with the first silicided portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.