Three-dimensional integrated circuit structure
US9899355B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2015 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Sep 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a 3DIC structure including first and second IC chips and connectors. The first IC chip includes a first metallization structure, a first optical active component, and a first photonic interconnection layer. The second IC chip includes a second metallization structure, a second optical active component, and a second photonic interconnection layer. The first and second IC chips are bonded via the first and second photonic interconnection layers. The first optical active component is between the first photonic interconnection layer and the first metallization structure. The first optical active component and the first metallization structure are bonded to each other. The second optical active component is between the second photonic interconnection layer and the second metallization structure. The second optical active component and the second metallization structure are bonded to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.