Tunnel barrier schottky
US9899482B2 · kind B2 · utility
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12Claims
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Key dates
| Filing date | Apr 7, 2016 |
| Grant date | Feb 20, 2018 |
| Priority date | — |
| Expiry date | Apr 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
Abstract
A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.