Semiconductor device having a trench with different electrode materials

US9899488B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Li Juin Yip · Villach, AT
• Martin Vielemeyer · Villach, AT

Key dates

• Filing date: Jan 25, 2017
• Grant date: Feb 20, 2018
• Expiry date: Jan 25, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/117

Abstract

A semiconductor device includes a semiconductor body having a front side and a back side, and a trench included in the semiconductor body. The trench extends into the semiconductor body along an extension direction that points from the front side to the back side. The trench includes an electrode structure and an insulation structure, the insulation structure insulating the electrode structure from the semiconductor body and the electrode structure being arranged for receiving an electric signal from external of the semiconductor device. The electrode structure includes a first electrode and a second electrode in contact with the first electrode, the first electrode including a first electrode material and the second electrode including a second electrode material different from the first electrode material. The first electrode extends further along the extension direction as compared to the second electrode.