Laser device and process for fabricating such a laser device

US9899800B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• STMicroelectronics SA
• STMicroelectronics (Crolles 2) SAS · FR

Inventors

• Thomas Ferrotti · Grenoble, FR
• Badhise Ben Bakir · Brézins, FR
• Alain Chantre · Seyssinet-Pariset, FR
• Sebastien Cremer · Hameau du Château, FR
• Hélène Duprez · Seyssinet-Pariset, FR

Key dates

• Filing date: Nov 11, 2016
• Grant date: Feb 20, 2018
• Expiry date: Nov 11, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/1032
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A III-V heterostructure laser device located in and/or on silicon, including a III-V heterostructure gain medium, a rib optical waveguide, located facing the gain medium and including a strip waveguide equipped with a longitudinal rib, the rib optical waveguide being located in the silicon, two sets (RBE-A, RBE-B) of Bragg gratings formed in the rib optical waveguide and located on either side of the III-V heterostructure gain medium, each set (RBE-A, RBE-B) of Bragg gratings including a first Bragg grating (RB1-A, RB1B) having a first pitch and formed in the rib and a second Bragg grating (RB2-A, RB2-B) having a second pitch different from the first pitch and formed on that side of the rib waveguide which is opposite the rib.