Self-referenced MRAM cell and magnetic field sensor comprising the self-referenced MRAM cell
US9905283B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 24, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Sep 24, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1673
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A self-referenced MRAM cell including a reference layer having a fixed reference magnetization, a sense layer having a free sense magnetization, a tunnel barrier, a biasing layer having bias magnetization and a biasing antiferromagnetic layer pinning the bias magnetization in a bias direction when MRAM cell is at temperature equal or below a bias threshold temperature. The bias magnetization is arranged for inducing a bias field adapted for biasing the sense magnetization in a direction opposed to the bias direction, such that the biased sense magnetization varies linearly in the presence of the external magnetic field, when the external magnetic field is oriented in a direction substantially perpendicular to the one of the reference magnetization. The present disclosure further concerns a magnetic field sensor including a plurality of the self-referenced MRAM cell and a method for programming the magnetic field sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.