Method for forming semiconductor structure
US9905430B1 · kind B1 · utility
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4References
16Claims
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Key dates
| Filing date | Aug 24, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Aug 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure includes following steps. A substrate is provided, and a semiconductor layer is formed on the substrate. Next, a SiN-rich pre-oxide layer is formed on the semiconductor layer. After forming the SiN-rich pre-oxide layer, an anneal treatment is performed to partially transfer the SiN-rich pre-oxide layer to form a SiN layer and a SiO layer. And the SiO layer is formed the on the SiN layer. Subsequently, a planarization process is performed to remove a portion of the SiO layer to expose the SiN layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.