Nonvolatile memory device and a method for fabricating the same
US9905568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Aug 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0413
Abstract
A nonvolatile memory device includes a conductive line disposed on a substrate and vertically extended from the substrate, a first channel layer disposed on the substrate and vertically extended from the substrate, wherein the first channel layer is spaced apart from the conductive line, a second channel layer vertically extended from the substrate, wherein the second channel layer is disposed between the first channel layer and the conductive line, a first gate electrode disposed between the conductive line and the second channel layer, wherein the first gate electrode includes a first portion having a first thickness and a second portion having a second thickness that is different from the first thickness, and a second gate electrode disposed between the first channel layer and the second channel layer, wherein the second gate electrode has the second thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.