Method of manufacturing superjunction semiconductor devices with a superstructure in alignment with a foundation
US9905639B2 · kind B2 · utility
1Cited by
0References
15Claims
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Assignee
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Key dates
| Filing date | Nov 25, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Nov 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
By using a single trench mask, first and second trenches are formed that extend from a main surface into a semiconductor layer. A foundation is formed that includes first regions in and/or directly adjoining the first trenches. A superstructure is formed in alignment with the foundation by using position information directly obtained from structures formed in the first and/or the second trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.