Semiconductor device having schottky junction between substrate and drain electrode
US9905684B2 · kind B2 · utility
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3References
14Claims
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Assignee
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Key dates
| Filing date | Mar 6, 2015 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Mar 6, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate that is made of a semiconductor material with a wider band gap than silicon, a field effect transistor, including a front surface element structure, provided on a front surface of the substrate, and a drain electrode having surface contact with the substrate so as to form a Schottky junction between the semiconductor substrate and the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.