Semiconductor device and trench field plate field effect transistor with a field dielectric including thermally grown and deposited portions
US9905685B2 · kind B2 · utility
1Cited by
1References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Apr 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0297
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes compensation structures that extend from a first surface into a semiconductor portion. Sections of the semiconductor portion between neighboring ones of the compensation structures form semiconductor mesas. A field dielectric separating a field electrode in the compensation structures from the semiconductor portion includes a thermally grown portion, which directly adjoins the semiconductor portion. A not fully densified deposited portion of the field dielectric has a lower density than the thermally grown portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.