Trigate transistor structure with unrecessed field insulator and thinner electrodes over the field insulator
US9905693B2 · kind B2 · utility
0Cited by
0References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2017 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Jul 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
Techniques related to integrated circuits having MOSFETs with an unrecessed field insulator and thinner electrodes over the field insulator of ICs, systems incorporating such integrated circuits, and methods for forming them are discussed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.