Fabrication of thin-film devices using selective area epitaxy
US9905727B2 · kind B2 · utility
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5References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Nov 7, 2016 |
| Grant date | Feb 27, 2018 |
| Priority date | — |
| Expiry date | Nov 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.