Semiconductor devices and methods of fabricating the same
US9911644B2 · kind B2 · utility
0Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2016 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Nov 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes semiconductor devices and methods of fabricating the same. The method includes forming an interlayer insulating layer on a substrate and forming conductive patterns in the interlayer insulating layer. A pore density of an upper portion of the interlayer insulating layer is higher than that of a lower portion of the interlayer insulating layer, and a pore density of an intermediate portion of the interlayer insulating layer gradually increases toward the upper portion of the interlayer insulating layer. An air gap is provided between the conductive patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.