Element chip and method for manufacturing the same
US9911677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2017 |
| Grant date | Mar 6, 2018 |
| Priority date | — |
| Expiry date | Feb 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an element chip includes a protection film etching step of removing a part of the protection film which is stacked on the dividing region and the protection film which is stacked on the element region through etching the protection film anisotropically by exposing the substrate to first plasma and remaining the protection film for covering an end surface of the element region. Furthermore, the method for manufacturing an element chip includes an isotropic etching step of etching the dividing region isotropically by exposing the substrate to second plasma and a plasma dicing step of dividing the substrate to a plurality of element chips including the element region by exposing the substrate to third plasma in a state where the second main surface is supported by a supporting member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.