Method for forming a semiconductor device and a semiconductor device

US9911808B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Philipp Seng · Munich, DE

Key dates

• Filing date: Jan 24, 2017
• Grant date: Mar 6, 2018
• Expiry date: Jan 24, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor device includes incorporating first dopant atoms of a first conductivity type into a semiconductor substrate to form a first doping region of the first conductivity type. Further, the method includes forming an epitaxial semiconductor layer on the semiconductor substrate and incorporating second dopant atoms of a second conductivity type before or after forming the epitaxial semiconductor layer to form a second doping region including the second conductivity type adjacent to the first doping region so that a pn-junction is located between the first doping region and the second doping region. The pn-junction is located in a vertical distance of less than 5 μm to an interface between the semiconductor substrate and the epitaxial semiconductor layer. Additionally, the method includes thinning the semiconductor substrate based on a self-aligned thinning process. The self-aligned thinning process is self-controlled based on the location of the pn-junction.