Patent · US Active

Semiconductive device and associated method of manufacture

US9911816B2 · kind B2 · utility

2Cited by

2References

17Claims

0Family size

Assignee

Nexperia B.V. · NL

Inventors

Tim Boettcher · Scheeßel, DE
Reza Behtash · Hamburg, DE
Thomas Igel-Holtzendorff · Nijmegen, NL
Linpei Zhu · 流花街道, CN

Key dates

Filing date	Apr 22, 2015
Grant date	Mar 6, 2018
Priority date	—
Expiry date	Apr 22, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/117
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductive device comprising a body having: a first surface and an opposing second surface; a first semiconductive layer adjacent to the first surface; an active region comprising: a plurality of active trenches in the first surface, extending from the first surface into the first semiconductive layer, and having an active trench width, and a plurality of active cells; and a termination region at a periphery of the first surface comprising: at least one termination trench extending from the first surface into the first semiconductive layer, wherein the termination region has a width that is greater than the active trench width; and a number of termination trench separators having a width that is less than a width of the active cells, wherein the active trenches and the at least one termination trench each comprise a first insulator layer adjacent to the first semiconductive layer of the body.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.