Patent · US Active

Single-electron transistor and its fabrication method

US9911841B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Sylvain Barraud · Grenoble, FR
Ivan Duchemin · Fontaine, FR
Louis HUTIN · Grenoble, FR
Yann-Michel Niquet · Grenoble, FR
Maud Vinet · Voiron, FR

Key dates

Filing date	Mar 10, 2016
Grant date	Mar 6, 2018
Priority date	—
Expiry date	Mar 10, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/85
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Single-electron transistor comprising at least:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.