Solar cell metallization

US9911875B2 · kind B2 · utility

Assignee

• Beamreach-Solexel Assets LLC · US

Inventors

• Swaroop Kommera · San Jose, US
• Pawan Kapur · Palo Alto, US
• Yen-Sheng Su · San Jose, US
• Vivek Saraswat · Milpitas, US
• Anand Deshpande · Cupertino, US
• Mehrdad M. Moslehi · Dallas, US

Key dates

• Filing date: Apr 23, 2014
• Grant date: Mar 6, 2018
• Expiry date: Apr 23, 2034

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.