Precursors of manganese and manganese-based compounds for copper diffusion barrier layers and methods of use

US9916975B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Feng Q. Liu · San Jose, US
• Ben-Li Sheu · Sunnyvale, US
• David Knapp · Mineral Point, US
• David Thompson · San Jose, US

Key dates

• Filing date: Oct 21, 2015
• Grant date: Mar 13, 2018
• Expiry date: Feb 2, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76873
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.