Method of planarizating film
US9917006B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Sep 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a patterned layer on a substrate having a first region and a second region being adjacent each other. The patterned layer includes first features in the first region. The second region is free of the patterned layer. The method further includes forming a material layer on the patterned layer and the substrate; forming a first guard ring disposed in the second region and surrounding the first features; forming a flowable-material (FM) layer over the material layer; forming a patterned resist layer over the FM layer, wherein the patterned resist layer includes a plurality of openings; and transferring the plurality of openings to the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.