Metal gate isolation structure and method forming same

US9917085B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Chih-Han Lin · Hsinchu, TW
• Wen-Shuo Hsieh · Taipei, TW
• Ming-Jie Huang · Hsinchu, TW
• Ryan Chia-Jen Chen · Chiayi, TW

Key dates

• Filing date: Aug 1, 2016
• Grant date: Mar 13, 2018
• Expiry date: Aug 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0177

Abstract

A device includes a gate isolation plug, which further includes a U-shaped layer having a bottom portion and two sidewall portions, and an inner region overlapping the bottom portion. The inner region contacts the two sidewall portions. A first transistor has a first gate stack, and a first end of the first gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. A second transistor has a second gate stack, and a second end of the second gate stack is in contact with both the inner region and the U-shaped layer of the gate isolation plug. The first gate stack and the second gate stack are on opposite sides of the gate isolation plug.