Hybrid MOS-PCM CMOS SOI switch
US9917104B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 19, 2017 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Jun 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N79/00
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A hybrid MOS-PCM IC switch utilizes both MOS transistors and groups of parallel-connected Phase-Change Material (PCM) cells to control signal transmissions. The MOS transistors are separated by PCM cell groups, and the PCM cells are configured to generate similar COFF or lower values as the MOS transistors, whereby the hybrid switch is both smaller and exhibits lower FOM than standard CMOS SOI switches. When switched into an open (OFF/high-resistance) state, both the PCM cells and MOS transistors function to distribute high VBSR voltages, and the MOS transistors prevent unintended phase changes (ON/OFF switching) of the PCM cells by preventing exponential current flow. In the closed (ON/conducting) state, the PCM cells facilitate lower total RON, whereby the hybrid CMOS SOI switch achieves improved FOM. The MOS transistors may also function as drivers during programming (switching) of direct-heating-type PCM cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.