Diode and method of making the same
US9917149B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | May 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.