Patent · US Active

Method for producing a microelectronic device

US9917153B2 · kind B2 · utility

0Cited by

2References

34Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Emmanuel Augendre · Montbonnot-Saint-Martin, FR
Thierry Baron · Pessac, FR

Key dates

Filing date	Jun 29, 2015
Grant date	Mar 13, 2018
Priority date	—
Expiry date	Jun 29, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A crystalline layer is produced from a crystalline substrate made from a first material on which a masking layer has previously been deposited; the masking layer containing at least one trench forming an access to the substrate, by:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.