Switching device, method of fabricating the same, and resistive random access memory including the switching device as a selection device
US9917250B2 · kind B2 · utility
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1References
15Claims
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Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Mar 13, 2018 |
| Priority date | — |
| Expiry date | Jul 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
A switching device includes a first electrode and a second electrode that are disposed over a substrate, and an electrolyte layer disposed between the first electrode and the second electrode and including a porous oxide. The switching device performs threshold switching operation on the basis of oxidation-reduction reactions of metal ions that are provided from the first electrode or the second electrode to the electrolyte layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.